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BUZ11S2 - N-Channel MOSFET

BUZ11S2 Description

isc N-Channel Mosfet Transistor BUZ11S2 *.

BUZ11S2 Features

* Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)
* SOA is Power Dissipation Limited
* High input impedance
* High speed switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

BUZ11S2 Applications

* such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VG

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Datasheet Details

Part number
BUZ11S2
Manufacturer
INCHANGE
File Size
224.93 KB
Datasheet
BUZ11S2-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE BUZ11S2-like datasheet