BUZ11A Datasheet, Mosfet, STMicroelectronics

PDF File Details

Part number:

BUZ11A

Manufacturer:

STMicroelectronics ↗

File Size:

80.18kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

BUZ11A Application

• Applications HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIE

TAGS

BUZ11A

STMicroelectronics

📁 Related Datasheet

BUZ11 - N-CHANNEL MOSFET (STMicroelectronics)
® BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET T YPE BUZ 11 s s s s s V DSS 50 V R DS(o n) < 0.04 Ω ID 33 A TYPICAL RDS(on) = 0.0.

BUZ11 - Power Transistor (Siemens Semiconductor Group)
BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50.

BUZ11 - N-Channel Power MOSFET (Intersil Corporation)
BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power fie.

BUZ11 - N-Channel Power MOSFET (ON Semiconductor)
Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power .

BUZ11 - N-Channel Power MOSFET (Fairchild Semiconductor)
Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power .

BUZ11 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor BUZ11 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High in.

BUZ110S - Power Transistor (Siemens Semiconductor Group)
BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in.

BUZ110SL - Power Transistor (Siemens Semiconductor Group)
BUZ 110 SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempe.

BUZ111S - Power Transistor (Siemens Semiconductor Group)
BUZ111S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in S.

BUZ111SL - Power Transistor (Siemens Semiconductor Group)
BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempera.