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BUZ111S Datasheet - Siemens Semiconductor Group

BUZ111S Power Transistor

BUZ111S SPP80N05 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv /dt rated 175°C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.008 Ω Package Ordering Code BUZ111S TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C ID A 80 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche ene.

BUZ111S_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BUZ111S

Manufacturer:

Siemens Semiconductor Group

File Size:

121.80 KB

Description:

Power transistor.

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