BUZ101 Datasheet - Siemens

BUZ101 Power Transistor

BUZ 101 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175°C operating temperature also in TO-220 SMD available Type BUZ 101 VDS 50 V ID 29 A RDS(on) 0.06 Ω Maximum Ratings Parameter Continuous drain current TC = 31 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C Reverse diode dv/dt IS = 29 A, VD.

BUZ101-Siemens.pdf