BUZ215 Datasheet - Siemens Semiconductor Group

BUZ215 Power Transistor

BUZ 215 SIPMOS ® Power Transistor N channel Enhancement mode FREDFET Pin 1 G Pin 2 D Pin 3 S Type BUZ 215 VDS 500 V ID 5A RDS(on) 1.5 Ω Package TO-220 AB Ordering Code C67078-A1400-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 5 TC = 30 °C Pulsed drain current IDpuls 20 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 75 V W TC =.

BUZ215_SiemensSemiconductorGroup.pdf