Q60215-Y1111 Datasheet - Siemens Semiconductor Group

Q60215-Y1111 NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t .

Q60215-Y1111 Features

* q Especially suitable for applications from Bereich von 420 nm bis 1130 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) 420 nm to 1130 nm q High linearity q Hermetically sealed metal package (TO-18) mit Basisanschluβ, geeignet bis 125 °C q Gruppiert lieferbar Anwendungen q Lichtsch

Q60215-Y1111 Datasheet (333.40 KB)

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Datasheet Details

Part number:

Q60215-Y1111

Manufacturer:

Siemens Semiconductor Group

File Size:

333.40 KB

Description:

Npn-silizium-fototransistor silicon npn phototransistor.

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Q60215-Y1111 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Siemens Semiconductor Group

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