* q Especially suitable for applications from Bereich von 420 nm bis 1130 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) 420 nm to 1130 nm q High linearity q Hermetically sealed metal package (TO-18) mit Basisanschluβ, geeignet bis 125 °C q Gruppiert lieferbar Anwendungen q Lichtsch
Q60215-Y1111 Datasheet (333.40 KB)
Q60215-Y1111
Siemens Semiconductor Group
333.40 KB
Npn-silizium-fototransistor silicon npn phototransistor.
BPY 62
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BPY 62
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise sp.
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