Q60215-Y1111 Datasheet, Phototransistor, Siemens Semiconductor Group

Q60215-Y1111 Features

• Phototransistor q Especially suitable for applications from Bereich von 420 nm bis 1130 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) 420 nm to 1130 nm q High linearity q Hermeticall

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Q60215-Y1111

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Siemens Semiconductor Group

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📄 Datasheet

Description:

Npn-silizium-fototransistor silicon npn phototransistor. Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Löt

Q60215-Y1111 Application

• Applications from Bereich von 420 nm bis 1130 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) 420 nm to 1130 nm q High linearity q

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Q60215-Y1111

Siemens Semiconductor Group

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