HYB511000BJ-50 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

Siemens

Description

1 M × 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1.
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

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Datasheet Specifications

Part number: HYB511000BJ-50
Manufacturer: Siemens
File Size: 193.00 KB
Datasheet: HYB511000BJ-50_SiemensSemiconductorGroup.pdf
Description: 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

Applications

* Pin Definitions and Functions Pin No. A0-A9 RAS DI DO CAS WE Function Address Inputs Row Address Strobe Data In Data Out Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) Test Function No Connection VCC VSS TF N. C. Semiconductor Group 34 HYB 511000BJ/BJL-50/-60/-70 1 M ×

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HYB511000BJ-50 1-Bit Dynamic RAM Low Power 1-Bit Dynamic RAM Siemens

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