HYB5116400BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Siemens

Description

4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70 Advanced Information * * * 4 194 304 words by 4-bi.
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

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Datasheet Specifications

Part number: HYB5116400BJ-60
Manufacturer: Siemens
File Size: 325.72 KB
Datasheet: HYB5116400BJ-60_SiemensSemiconductorGroup.pdf
Description: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 5116400BJ-70 HYB 5116400BT-50 HYB 5116400BT-60 HYB 5116400BT-70 Pin Names A0-A11 A0-A9 RAS OE I/O1-I/O4 CAS

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HYB5116400BJ-60 4-Bit Dynamic RAM Refresh Siemens

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