HYB5116400BJ-60 Datasheet - Siemens

HYB5116400BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5116400BJ/BT-50/-60/-70 4M x 4-DRAM Vcc I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 1.

4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70 Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 5 V (± 10 %) supply Low power dissipation max. 550 active.

HYB5116400BJ-60 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 5116400BJ-70 HYB 5116400BT-50 HYB 5116400BT-60 HYB 5116400BT-70 Pin Names A0-A11 A0-A9 RAS OE I/O1-I/O4 CAS

HYB5116400BJ-60 Datasheet (325.72 KB)