HYB5116405BJ-70 Datasheet - Siemens

HYB5116405BJ-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns

HYB5116405BJ-70 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116405BT-50 HYB 5116405BT-60 HYB 5116405BT-70 HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 51174

HYB5116405BJ-70_SiemensSemiconductorGroup.pdf