HYB5118165BSJ-60 Datasheet - Siemens

HYB5118165BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh

5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM 5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM HYB 5118165BST-50 on request HYB 5118165BST-60 on request HYB 3118165BST-50 on request HYB 3118165BST-60 on request 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Semiconductor Group 2 .

1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) Advanced Information 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Hyper Page Mode-EDO-operation Performance: -50 -60 60 15 30 HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 tRAC RAS access time tCAC CAS access time tAA tRC Access time from address Read/Write cycle time 50 13 25 84 20 ns ns ns ns ns 104 25 tHPC Hyper page mode (EDO) cycle time Power Diss.

HYB5118165BSJ-60 Datasheet (192.05 KB)