Datasheet Details
Part number:
HYB514256BL-70
Manufacturer:
Siemens
File Size:
215.36 KB
Description:
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Features
* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup applications. Pin Definitions and Functions Pin No. A0-A8 RAS OE I/O1-I/O4 CAS WE Function Address Inputs
HYB514256BL-70_SiemensSemiconductorGroup.pdf
HYB514256BL-70, 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
DRAM (access time 50ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)
256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) Low power dissipation max.
495 mW
HYB514256BL-70 Distributor
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