HYB514405BJL-70 Datasheet PDF (1M x 4-Bit Dynamic RAM)

HYB514405BJL-70 - 1M x 4-Bit Dynamic RAM

This page provides the datasheet information for the HYB514405BJL-70, a member of the HYB 1M x 4-Bit Dynamic RAM family.

Description

EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 70 ns) Low Power EDO-DRAM (access time 50 ns) Low Power EDO-DRAM (access time 60 ns) Low Power EDO-DRAM (access time 70 ns) Semiconductor Group 2 HYB 514405BJ/BJL-50/-60/-70 1M x 4 EDO - DRAM Pin Configuration (top

Features

5 10 10.
ns ns ns ns ns CAS-before-RAS Counter Test Cycle CAS precharge time (CASbefore-RAS counter test cycle) tCPT 35.
40.
40.
ns Test Mode Write command setup time Write command hold time tWTS tWTH 10 10.
10 10.
10 10.
ns ns Capacitance TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; f = 1 MHz Parameter Input capacitance (A0 to A9) Input capacitance (RAS.

Datasheet Details

Part number	HYB514405BJL-70
Manufacturer	Siemens
File Size	1.33 MB
Description	1M x 4-Bit Dynamic RAM
Datasheet	HYB514405BJL-70 Datasheet
Additional preview pages of the HYB514405BJL-70 datasheet.

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Full PDF Text Transcription

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1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) HYB 514405BJ/BJL-50/-60/-70 Preliminary Information • • • • 1 048 576 words by 4-bit organization 0 to 70 ˚C operating temperature Hyper Page Mode - EDO Performance: -50 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 89 20 • • Single + 5 V (± 10 %) supply Low power dissipation max. 660 mW active (-50 version) max. 605 mW active (-60 version) max. 550 mW active (-70 version) Standby power dissipation: 11 mW max.standby (TTL) 5.5 mW max.standby (CMOS) 1.1 mW max.

Published: Apr 23, 2005 |