HYM321000GS-50 Datasheet - Siemens

HYM321000GS-50 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module

DRAM module (access time50 ns) DRAM module (access time 60 ns) DRAM module (access time 50 ns) DRAM module (access time 60 ns) Semiconductor Group 2 HYM 321000S/GS-50/-60 1M × 32-Bit Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 N.C. DQ20 DQ21 DQ22 DQ23 N.C. A8 N.C. N.C. 1 DQ0 2 3 DQ1 4 5 DQ2.

1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module) HYM 321000S/GS-50/-60 Advanced Information 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max 2200 mW active (-50 version.

HYM321000GS-50 Features

* nsures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only: If tRCD is greater than the specifie

HYM321000GS-50_SiemensSemiconductorGroup.pdf