HYM324025GS-60 Datasheet (Siemens) - 4M x 32-Bit EDO-DRAM Module

HYM324025GS-60, 4M x 32-Bit EDO-DRAM Module

EDO - DRAM Module (access time 50 ns) EDO - DRAM Module (access time 60 ns) EDO - DRAM Module (access time 50 ns) EDO - DRAM Module (access time 60 ns) Semiconductor Group 2 HYM 324025S/GS-50/-60 4M x 32-Bit EDO-Module Pin Configuration Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C.

A1 A3 A5 A10 DQ20 D

4M x 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max.

5280 mW active (HYM 324025S/GS-50) max.

4840 mW active (HYM 324025S/GS-60) CMOS

HYM324025GS-60 Features

* specified current load and 100 pF at Vol = 0.8 V and Voh = 2.