HYM72V1610GS-60 Datasheet - Siemens

HYM72V1610GS-60 16M x 72-Bit Dynamic RAM Module

3.3V 50ns DRAM module 3.3V 60ns DRAM module 3.3V 50ns DRAM module 3.3V 60ns DRAM module Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high level all PD terminal are in tri-state. Semiconductor Group 2 HYM72V1600/10GS-50/-60 16M x 7.

16M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information 16 777 216 words by 72-bit ECC - mode organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V (± 0.3V) supply Low power dissipation max. 6480 mW active (-50 version) max. 58.

HYM72V1610GS-60 Features

* 12-DQ15 I/O1-I/O4 D3 DQ48-DQ51 I/O1-I/O4 D12 DQ16-DQ19 I/O1-I/O4 D4 DQ52-DQ55 I/O1-I/O4 D13 DQ20-DQ23 I/O1-I/O4 D5 DQ56-DQ59 I/O1-I/O4 D14 DQ24-DQ27 I/O1-I/O4 D6 DQ60-DQ63 I/O1-I/O4 D15 DQ28

HYM72V1610GS-60_SiemensSemiconductorGroup.pdf