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085R5NT - 85V N-CHANNEL MOSFET

General Description

The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A，85V，RDS(on)(typ. )=4.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 8 765 1 2 34 PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L.

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Datasheet Details

Part number 085R5NT
Manufacturer Silan Microelectronics
File Size 310.93 KB
Description 85V N-CHANNEL MOSFET
Datasheet download datasheet 085R5NT Datasheet

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085R5NS 85V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVT085R5NT/S/L5_Datasheet 120A, 85V N-CHANNEL MOSFET DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES  120A，85V，RDS(on)(typ.)=4.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 8 765 1 2 34 PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No.