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085R5NS - 85V N-CHANNEL MOSFET

Download the 085R5NS datasheet PDF. This datasheet also covers the 085R5NT variant, as both devices belong to the same 85v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A，85V，RDS(on)(typ. )=4.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 8 765 1 2 34 PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (085R5NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 085R5NS
Manufacturer Silan Microelectronics
File Size 310.93 KB
Description 85V N-CHANNEL MOSFET
Datasheet download datasheet 085R5NS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
085P02A P-channel Enhancement Mode Power MOSFET JIEJIE

Other Datasheets by Silan Microelectronics

Part Number Description
085R5NT 85V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVT085R5NT/S/L5_Datasheet 120A, 85V N-CHANNEL MOSFET DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES  120A，85V，RDS(on)(typ.)=4.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 8 765 1 2 34 PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No.