085R5NT Datasheet | Silan Microelectronics

Silan Microelectronics SVT085R5NT/S/L5_Datasheet 120A, 85V N-CHANNEL MOSFET DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. Features - 120A，85V，RDS(on)(typ.)=4.5m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability S1 8D S2 7D S3 6D G4 5D 1.Gate 2.Drain 3.Source 8 765 1 2...