11N65FJHD2 Datasheet - Silan Microelectronics

650V SUPER JUNCTION MOS POWER TRANSISTOR

11N65FJHD2 Features

* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJH-3L NOMENCLATURE Silan Super-junction MOS products S denotes Silan VS d

11N65FJHD2 General Description

SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal.

11N65FJHD2 Datasheet (264.96 KB)

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Datasheet Details

Part number:

11N65FJHD2

Manufacturer:

Silan Microelectronics

File Size:

264.96 KB

Description:

650v super junction mos power transistor.

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11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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11N65FJHD2 Features

11N65FJHD2 General Description

Datasheet Details

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