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11N65FJHD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – 11N65FJHD2

Datasheet Details

Part number	11N65FJHD2
Manufacturer	Silan Microelectronics
File Size	264.96 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	11N65FJHD2 Datasheet
Additional preview pages of the 11N65FJHD2 datasheet.

Product details

Description

SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology.

Features

11A,650V, RDS(on)(typ. )=0.33@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 12 3 TO-220FJH-3L.

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Published: Oct 25, 2024 |