11N65FJHD2 Datasheet, Power Transistor, Silan Microelectronics

650v super junction mos power transistor

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Part number:

11N65FJHD2

Manufacturer:

Silan Microelectronics

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264.96 KB

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Description:

650v super junction mos power transistor.
SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology.
It achieves low conduction loss and switching losses.
It leads the desig.

✔ 11N65FJHD2 Features

11A,650V, RDS(on)(typ.)=0.33@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak c

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11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics