11N65FJHD2 Datasheet - Silan Microelectronics

11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal.

11N65FJHD2 Features

* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJH-3L NOMENCLATURE Silan Super-junction MOS products S denotes Silan VS d

11N65FJHD2-SilanMicroelectronics.pdf