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11N65FJHD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

11N65FJHD2 Description

Silan Microelectronics SVS11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL .
SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology.

11N65FJHD2 Features

* 11A,650V, RDS(on)(typ. )=0.33@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 12 3 TO-220FJH-3L NOMENCLATURE Silan Super-junction MOS products S denotes Silan VS d

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Datasheet Details

Part number
11N65FJHD2
Manufacturer
Silan Microelectronics
File Size
264.96 KB
Datasheet
11N65FJHD2-SilanMicroelectronics.pdf
Description
650V SUPER JUNCTION MOS POWER TRANSISTOR

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650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
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