7N65FJD2, 7N65MJD2 Datasheet - Silan Microelectronics

7N65FJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior.

7N65FJD2 Features

* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L

* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1

7N65MJD2-SilanMicroelectronics.pdf

7N65FJD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: 7N65FJD2, 7N65MJD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

7N65FJD2, 7N65MJD2

Manufacturer:

Silan Microelectronics

File Size:

276.40 KB

Description:

650v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: 7N65FJD2, 7N65MJD2.
Please refer to the document for exact specifications by model.

7N65FJD2 Distributor

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7N65FJD2 7N65MJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics