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7N65FJD2

650V SUPER JUNCTION MOS POWER TRANSISTOR

7N65FJD2 Features

* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L

* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1

7N65FJD2 General Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior.

7N65FJD2 Datasheet (276.40 KB)

Preview of 7N65FJD2 PDF

Datasheet Details

Part number:

7N65FJD2

Manufacturer:

Silan Microelectronics

File Size:

276.40 KB

Description:

650v super junction mos power transistor.

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TAGS

7N65FJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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