7N65MJD2 Datasheet (Silan Microelectronics) - 650V SUPER JUNCTION MOS POWER TRANSISTOR

7N65MJD2, 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior

7N65MJD2 Features

* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L

* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1