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7N65MJD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

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Datasheet Details

Part number	7N65MJD2
Manufacturer	Silan Microelectronics
File Size	276.40 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	7N65MJD2-SilanMicroelectronics.pdf

7N65MJD2 Product details

Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Enhanced avalanche capability.
Extreme dv/dt rated.
High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

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Published: Oct 25, 2024 |