7N70MJD2, 7N70FD2 Datasheet - Silan Microelectronics

7N70MJD2 700V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior .

7N70MJD2 Features

* 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L

* 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 1 23 TO-251J-3L 1 23 TO

7N70FD2-SilanMicroelectronics.pdf

7N70MJD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: 7N70MJD2, 7N70FD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

7N70MJD2, 7N70FD2

Manufacturer:

Silan Microelectronics

File Size:

384.89 KB

Description:

700v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: 7N70MJD2, 7N70FD2.
Please refer to the document for exact specifications by model.

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7N70MJD2 7N70FD2 700V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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