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SGM820PB8B3TFM 750V IGBT

SGM820PB8B3TFM Description

SGM820PB8B3TFM Datasheet 820A, 750V IGBT MODULE 1..
SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology.

SGM820PB8B3TFM Features

* high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions. 2. FEATURES
* Based on fine trench FS-V technology, blocking voltage up to 750V
* Low VCE(sat) with positive

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750V IGBT Silan Microelectronics
Silan Microelectronics SGM820PB8B3TFM-like datasheet