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SGM950PB8B3TFM Datasheet - Silan Microelectronics

SGM950PB8B3TFM, 750V IGBT

SGM950PB8B3TFM Datasheet 950A, 750V IGBT MODULE 1..
SGM950PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology.
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SGM950PB8B3TFM-SilanMicroelectronics.pdf

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Datasheet Details

Part number:

SGM950PB8B3TFM

Manufacturer:

Silan Microelectronics

File Size:

355.01 KB

Description:

750V IGBT

Features

* high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions. 2. FEATURES
* Based on fine trench FS-V technology, blocking voltage up to 750V
* Low VCE(sat) with positive

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