SVF18N50F Datasheet | Silan Microelectronics

DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES - 18A,500V,RDS(on)(typ.)=0.26@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ Package TO-220F-3L TO-220-3L TO-3P TO-220FJ-3L Marking SVF18N50F SVF18N50T 18N50 SVF18N50FJ Hazardous Substance Control Pb free Pb free Pb free Halogen free Packing Tube Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:2.1 Page 1 of 10 SVF18N50F/T/PN/FJ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC = 25°C TC = 100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS SVF18N50F/FJ IDM...