SVF18N50FJ
DESCRIPTION
SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
- 18A,500V,RDS(on)(typ.)=0.26@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ
Package
TO-220F-3L TO-220-3L
TO-3P TO-220FJ-3L
Marking
SVF18N50F SVF18N50T
18N50 SVF18N50FJ
Hazardous Substance Control
Pb free Pb free Pb free Halogen free
Packing
Tube Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn
Rev.:2.1 Page 1 of 10
SVF18N50F/T/PN/FJ...
