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SVF5N60MJ, SVF5N60T Datasheet - Silan Microelectronics

SVF5N60MJ 600V N-CHANNEL MOSFET

SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provid.

SVF5N60MJ Features

* ∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF5N60T SVF5N60F SVF5N60D SVF5N60DTR SVF5N60MJ Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVF5N60T SVF5N60F SVF5N60D S

SVF5N60T-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF5N60MJ, SVF5N60T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVF5N60MJ, SVF5N60T

Manufacturer:

Silan Microelectronics

File Size:

484.38 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF5N60MJ, SVF5N60T.
Please refer to the document for exact specifications by model.

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SVF5N60MJ SVF5N60T 600V N-CHANNEL MOSFET Silan Microelectronics

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