SCDP120R040NP4B 1200V SiC MOS POWER TRANSISTOR

Silan Semiconductors

Description

Silan Microelectronics SCDP120R040NP4B_Datasheet 40mΩ, 1200V SiC MOS POWER TRANSISTOR .
SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

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Datasheet Specifications

Part number: SCDP120R040NP4B
Manufacturer: Silan Semiconductors
File Size: 682.97 KB
Datasheet: SCDP120R040NP4B-SilanSemiconductors.pdf
Description: 1200V SiC MOS POWER TRANSISTOR

Features

* 66A, 1200V, RDS(on)(typ. )= 40m@VGS=15V
* Silicon Carbide technology
* Low switching loss
* Low reverse recovery charge
* Reduced requirement for heat dissipation
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFORMANCE PARAMETERS Character

SCDP120R040NP4B Distributors

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SCDP120R040NP4B 1200V SiC MOS POWER TRANSISTOR Silan Semiconductors

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