Part number:
SCDP120R040NP4B
Manufacturer:
Silan Semiconductors
File Size:
682.97 KB
Description:
1200v sic mos power transistor.
SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal
SCDP120R040NP4B Features
* 66A, 1200V, RDS(on)(typ.)= 40m@VGS=15V
* Silicon Carbide technology
* Low switching loss
* Low reverse recovery charge
* Reduced requirement for heat dissipation
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFORMANCE PARAMETERS Character
SCDP120R040NP4B-SilanSemiconductors.pdf
Datasheet Details
SCDP120R040NP4B
Silan Semiconductors
682.97 KB
1200v sic mos power transistor.
📁 Related Datasheet
📌 All Tags