SCDP120R040NP4B Datasheet - Silan Semiconductors

SCDP120R040NP4B - 1200V SiC MOS POWER TRANSISTOR

SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal

SCDP120R040NP4B Features

* 66A, 1200V, RDS(on)(typ.)= 40m@VGS=15V

* Silicon Carbide technology

* Low switching loss

* Low reverse recovery charge

* Reduced requirement for heat dissipation

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFORMANCE PARAMETERS Character

Datasheet Details

SCDP120R040NP4B

Silan Semiconductors

682.97 KB

1200v sic mos power transistor.

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