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SCDP120R040NP4B Datasheet - Silan Semiconductors

SCDP120R040NP4B 1200V SiC MOS POWER TRANSISTOR

SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal .

SCDP120R040NP4B Features

* 66A, 1200V, RDS(on)(typ.)= 40m@VGS=15V

* Silicon Carbide technology

* Low switching loss

* Low reverse recovery charge

* Reduced requirement for heat dissipation

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFORMANCE PARAMETERS Character

SCDP120R040NP4B-SilanSemiconductors.pdf

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Datasheet Details

Part number:

SCDP120R040NP4B

Manufacturer:

Silan Semiconductors

File Size:

682.97 KB

Description:

1200v sic mos power transistor.

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SCDP120R040NP4B SCDP120R040NP4B 1200V SiC MOS POWER TRANSISTOR Silan Semiconductors

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