SI4432
Silicon Labs
1.52MB
Ism transceiver. Silicon Laboratories’ Si4430/31/32 devices are highly integrated, single chip wireless ISM transceivers. The high-performance EZRadi
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Si4430 - ISM TRANSCEIVER
(Silicon Laboratories)
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SI4430BDY - N-Channel MOSFET
(Vishay Siliconix)
Specification Comparison
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Vishay Siliconix
Si4430BDY vs. Si4430DY
Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SO-.
SI4430DY - N-Channel MOSFET
(Vishay Siliconix)
Si4430DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.004 (typ)@ VGS = 10 V 0.008 @ VGS = 4.5.
Si4431 - ISM TRANSCEIVER
(Silicon Laboratories)
.
SI4431ADY - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET
Si4431ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.030 @ VGS = –10 V –30
0.052 @ VGS = –4.5 V
ID (A)
–.
SI4431BDY - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET
Si4431BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = - 10 V - 30
0.050 at VGS = - 4.5 V
ID .
SI4433DY - P-Channel 1.8-V (G-S) MOSFET
(Vishay Siliconix)
Si4433DY
..
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.110 @ VGS = –4.5 V –20.
SI4434DY - N-Channel MOSFET
(Vishay Siliconix)
N-Channel 250-V (D-S) MOSFET
Si4434DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RrDS(on) (Ω)
250 0.155 at VGS = 10 V 0.162 at VGS = 6.0 V
ID (A) .
Si4435 - P-Channel Enhancement MOSFET
(Nanxin)
Features
·Low On resistance. ·-4.5V drive. ·RoHS pliant.
Si4435
P-Channel Enhancement MOSFET
Si4435
Package Dimensions
Specifications
Absolute.
SI4435BDY - P-Channel 30-V (D-S) MOSFET
(Vishay Siliconix)
Si4435BDY
..
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−30
FEATURES
ID (A)
−9.1 −6.9
rDS(on) (W)
0.020.