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P-Channel 30-V (D-S) MOSFET
Si4431BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = - 10 V - 30
0.050 at VGS = - 4.5 V
ID (A) - 7.5 - 5.8
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 7.5 - 6.0
- 5.7 - 4.6
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 2.1
- 1.