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SSM2030GM - N- and P-channel Enhancement-mode Power MOSFET

SSM2030GM Description

SSM2030GM N- and P-channel Enhancement-mode Power MOSFETs Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS com.
D2 D2 D1 D2 D1 D1 D1 SO-8 G2 S2G2 G1 S2 S1 S1 G1 N-CH P-CH BV DSS RDS(ON) ID BVDSS RDS(ON) ID Advanced Power MOSFETs from Silicon Standard pr.

SSM2030GM Applications

* This device is suitable for low voltage applications requiring complementary N and P MOSFETs. D1 G2 S1 20V 30mΩ 6A -20V 50mΩ -5A D2 S2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VGS I D @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Dr

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Datasheet Details

Part number
SSM2030GM
Manufacturer
Silicon Standard
File Size
530.90 KB
Datasheet
SSM2030GM-SiliconStandard.pdf
Description
N- and P-channel Enhancement-mode Power MOSFET

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and P-channel Enhancement-mode Power MOSFET Silicon Standard
Silicon Standard SSM2030GM-like datasheet