SSM20G45EGH N-channel Insulated-Gate Bipolar Transistor

Silicon Standard

Description

SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP 450V 5V typ.130A Pb-free; RoHS-compliant TO-251 (I.
The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit.

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Datasheet Specifications

Part number: SSM20G45EGH
Manufacturer: Silicon Standard
File Size: 724.72 KB
Datasheet: SSM20G45EGH-SiliconStandard.pdf
Description: N-channel Insulated-Gate Bipolar Transistor

Applications

* such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an ext

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SSM20G45EGH N-channel Insulated-Gate Bipolar Transistor Silicon Standard

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