SSM20G45EGH

N-channel Insulated-Gate Bipolar Transistor

Silicon Standard

SSM20G45EGH General Description

The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial s.

SSM20G45EGH Datasheet (724.72 KB)

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SSM20G45EGH

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Silicon Standard

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724.72 KB

Description:

N-channel insulated-gate bipolar transistor.
SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP 450V 5V typ. 130A Pb-free; RoHS-compliant TO-251 (I.

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SSM20G45EGH N-channel Insulated-Gate Bipolar Transistor Silicon Standard

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SSM20G45EGH General Description

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