.
Powerex Power Semiconductors
CT60AM-18F - INSULATED GATE BIPOLAR TRANSISTOR
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 .
International Rectifier
IRGS4B60KD1 - INSULATED GATE BIPOLAR TRANSISTOR
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. .
IXYS
T2400GB45E - Insulated Gate Bi-Polar Transistor
Date:- 11 Dec, 2018 Data Sheet Issue:- 4 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RA.
International Rectifier
IRGS6B60KD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600.
International Rectifier
IRGBC20U - INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all tail losses • Optimized for high operating fre.
International Rectifier
IRGP6690D-EPbF - Insulated Gate Bipolar Transistor
VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 75A Applications • Welding • H Bridge Converters IRGP6690DPbF .
Advanced Power Electronics
AP80N03GP-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fas.
Advanced Power Electronics
AP80N03GS-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fas.
IXYS
T0160NB45A - Insulated Gate Bi-Polar Transistor
Date:- 6 Nov, 2015 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RAT.
IXYS
T0258HF65G - Insulated Gate Bi-Polar Transistor
Date:- 9 Dec, 2016 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VCES VCES VCES VDC link VGES V.
GE
IGT6D10 - Insulated Gate Bipolar Transistor
mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transisto.
Fuji Electric
1MB12-140 - INSULATED GATE BIPOLAR TRANSISTOR
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com .
Huajing Microelectronics
BT40T60ANFD - Insulated gate bipolar transistor
BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280 .
Microsemi
MM018-06L - 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 Features • Available in Low Conduction Loss Class as MM118-xxL or Fas.
NTE
NTE3311 - Insulated Gate Bipolar Transistor
NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.
International Rectifier
IRG4BC30KD-S - INSULATED GATE BIPOLAR TRANSISTOR
PD -91594C IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor.
IRF
IRG4PC50UD - INSULATED GATE BIPOLAR TRANSISTOR
PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequenc.
