GB10B60KD Datasheet, Transistor, International Rectifier

GB10B60KD Features

• Transistor
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Reco

PDF File Details

Part number:

GB10B60KD

Manufacturer:

International Rectifier

File Size:

365.90kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

GB10B60KD Application

• Applications 1 1E+0 0.001 1E-6 1E-5 1E-4 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIO

TAGS

GB10B60KD

International Rectifier

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