GB10B60KD Datasheet - International Rectifier

GB10B60KD, INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .

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GB10B60KD_InternationalRectifier.pdf

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Datasheet Details

Part number:

GB10B60KD

Manufacturer:

International Rectifier

File Size:

365.90 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

GB10B60KD Distributors

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GB10B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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