GB10B60KD INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

www.DataSheet4U.com PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .

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Datasheet Specifications

Part number: GB10B60KD
Manufacturer: International Rectifier
File Size: 365.90 KB
Datasheet: GB10B60KD_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

GB10B60KD Distributors

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GB10B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier GB10B60KD-like datasheet