GB10MPS17-247 Datasheet, Diode, GeneSiC

GB10MPS17-247 Features

• Diode
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• 175 °C Maximum

PDF File Details

Part number:

GB10MPS17-247

Manufacturer:

GeneSiC

File Size:

307.86kb

Download:

📄 Datasheet

Description:

Silicon carbide schottky diode.

GB10MPS17-247 Application

• Applications
• Boost Diode in Power Factor Correction (PFC)
• Switched Mode Power Supply (SMPS)
• Uninterruptible Power Supp

TAGS

GB10MPS17-247

GeneSiC

📁 Related Datasheet

GB100DA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • NPT warp 2 speed IGBT .

GB100TS60NPBF - Ultrafast Speed IGBT (Vishay Siliconix)
.DataSheet.co.kr GB100TS60NPbF Vishay High Power Products INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch.

GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .

GB10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction tem.

GB10NB37LZ - internally clamped IGBT (ST Microelectronics)
® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 1.

GB10NB60S - low drop IGBT (STMicroelectronics)
STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ .

GB10NC60HD - very fast IGBT (STMicroelectronics)
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES rat.

GB10NC60K - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs t(s)Applications c■ .

GB10NC60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES .

GB10RF120K - IGBT PIM MODULE (International Rectifier)
Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capabi.