GB10MPS17-247 - Silicon Carbide Schottky Diode

Product Overview

GeneSiC

Part number	GB10MPS17-247
Manufacturer	GeneSiC
File Size	307.86 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB10MPS17-247 Datasheet
Additional preview pages of the GB10MPS17-247 datasheet.

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1700 V = 24 A = 53 nC Advantages.
Low Standby Power Losses.
Impr.

📁 Similar Datasheet

Other Datasheets by GeneSiC

Published: May 6, 2019 |