Datasheet4U Logo Datasheet4U.com

GB100DA60UP

Insulated Gate Bipolar Transistor

GB100DA60UP Features

* NPT warp 2 speed IGBT technology with positive temperature coefficient

* Square RBSOA

* HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227

* Fully isolated package

* Very low internal inductance ( 5 nH typical)

* Industry standard

GB100DA60UP Datasheet (250.62 KB)

Preview of GB100DA60UP PDF

Datasheet Details

Part number:

GB100DA60UP

Manufacturer:

Vishay ↗ Siliconix

File Size:

250.62 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

GB100TS60NPBF - Ultrafast Speed IGBT (Vishay Siliconix)
.DataSheet.co.kr GB100TS60NPbF Vishay High Power Products INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch.

GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .

GB10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction tem.

GB10MPS17-247 - Silicon Carbide Schottky Diode (GeneSiC)
GB10MPS17-247 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Ca.

GB10NB37LZ - internally clamped IGBT (ST Microelectronics)
® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 1.

GB10NB60S - low drop IGBT (STMicroelectronics)
STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ .

GB10NC60HD - very fast IGBT (STMicroelectronics)
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES rat.

GB10NC60K - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs t(s)Applications c■ .

TAGS

GB100DA60UP Insulated Gate Bipolar Transistor Vishay Siliconix

Image Gallery

GB100DA60UP Datasheet Preview Page 2 GB100DA60UP Datasheet Preview Page 3

GB100DA60UP Distributor