GB10HF60KD

short-circuit rugged IGBT

STMicroelectronics

GB10HF60KD Features

* Low on-voltage drop (VCE(sat))

* Operating junction temperature up to 175 °C

* Low Cres / Cies ratio (no cross conduction )susceptibility) t(s

* Tight parameter distribution uc

* Ultrafast soft-recovery antiparallel diode d

* Short-circuit rugged ProApplications lete

* M

GB10HF60KD General Description

cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applicatio.

GB10HF60KD Datasheet (449.33 KB)

GB10HF60KD Datasheet Preview — Preview of GB10HF60KD PDF

Datasheet Details

Part number:

GB10HF60KD

Manufacturer:

STMicroelectronics ↗

File Size:

449.33 KB

Description:

Short-circuit rugged igbt.

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GB10HF60KD short-circuit rugged IGBT STMicroelectronics

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GB10HF60KD Features

GB10HF60KD General Description

Datasheet Details

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