GB10NC60KD
1.30MB
Short-circuit rugged igbt. This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state
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GB10NC60K - short-circuit rugged IGBT
(STMicroelectronics)
STGB10NC60K
10 A, 600 V short-circuit rugged IGBT
Features
■ Low on voltage drop (VCESAT)
■ Short-circuit withstand time 10 µs
t(s)Applications c■ .
GB10NC60HD - very fast IGBT
(STMicroelectronics)
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD
600 V - 10 A - very fast IGBT
Features
■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES rat.
GB10NB37LZ - internally clamped IGBT
(ST Microelectronics)
®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB37LZ
s s s s s s
V CES CLAMPED
V CE(s at) < 1.8 V
IC 1.
GB10NB60S - low drop IGBT
(STMicroelectronics)
STGB10NB60S STGP10NB60S
16 A, 600 V, low drop IGBT
Features
■ Low on-voltage drop (VCE(sat)) ■ High current capability
Applications
■ Light dimmer ■ .
GB100DA60UP - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• NPT warp 2 speed IGBT .
GB100TS60NPBF - Ultrafast Speed IGBT
(Vishay Siliconix)
.DataSheet.co.kr
GB100TS60NPbF
Vishay High Power Products
INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A
FEATURES
• Generation 5 Non Punch.
GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = .
GB10HF60KD - short-circuit rugged IGBT
(STMicroelectronics)
STGB10HF60KD STGF10HF60KD, STGP10HF60KD
10 A - 600 V - short-circuit rugged IGBT
Features
■ Low on-voltage drop (VCE(sat))
■ Operating junction tem.
GB10MPS17-247 - Silicon Carbide Schottky Diode
(GeneSiC)
GB10MPS17-247
1700V 10A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Ca.
GB10RF120K - IGBT PIM MODULE
(International Rectifier)
Bulletin I27278 01/07
GB10RF120K
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capabi.