GB14NC60KD Datasheet - STMicroelectronics

GB14NC60KD 600V short-circuit rugged IGBT

These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Order code STGB14NC60KDT4 STGF14NC60KD STGP14NC60KD Table 1: Device summary Marking Package GB14NC60KD D²PAK.

GB14NC60KD Features

* Low on voltage drop (VCE(sat))

* Low Cres / Cies ratio (no cross-conduction susceptibility)

* Very soft ultrafast recovery antiparallel diode

* Short-circuit withstand time 10 μs Applications

* High frequency inverters

* SMPS and PFC in both hard switch and resonant topolog

GB14NC60KD-STMicroelectronics.pdf