GB10SLT12-252 Datasheet - GeneSiC

GB10SLT12-252 Silicon Carbide Schottky Diode

GB10SLT12-252 Features

* High Avalanche (UIS) Capability

* Enhanced Surge Current Capability

* Superior Figure of Merit QC/IF

* Low Thermal Resistance

* 175 °C Maximum Operating Temperature

* Temperature Independent Switching Behavior

* Positive Temperature Coefficie

Datasheet Details

GB10SLT12-252

GeneSiC

459.14 KB

Silicon carbide schottky diode.

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GB10SLT12-252 Silicon Carbide Schottky Diode GeneSiC

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