GB10SLT12-252 Silicon Carbide Schottky Diode

GeneSiC

Description

GB10SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .

📥 Download Datasheet

GB10SLT12-252 Datasheet Preview — Preview of GB10SLT12-252 PDF

Datasheet Specifications

Part number: GB10SLT12-252
Manufacturer: GeneSiC
File Size: 459.14 KB
Datasheet: GB10SLT12-252-GeneSiC.pdf
Description: Silicon Carbide Schottky Diode

Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Inverters
* LED and HID Lighting
* AC-DC Co

GB10SLT12-252 Distributors

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GB10SLT12-252 Silicon Carbide Schottky Diode GeneSiC

GeneSiC GB10SLT12-252-like datasheet

GB10MPS17-247