GB100TS60NPBF Datasheet, Igbt, Vishay Siliconix

GB100TS60NPBF Features

• Igbt
• Generation 5 Non Punch Through (NPT) technology
• Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit cap

PDF File Details

Part number:

GB100TS60NPBF

Manufacturer:

Vishay ↗ Siliconix

File Size:

263.95kb

Download:

📄 Datasheet

Description:

Ultrafast speed igbt.

TAGS

GB100TS60NPBF

Vishay Siliconix

📁 Related Datasheet

GB100DA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • NPT warp 2 speed IGBT .

GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .

GB10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction tem.

GB10MPS17-247 - Silicon Carbide Schottky Diode (GeneSiC)
GB10MPS17-247 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Ca.

GB10NB37LZ - internally clamped IGBT (ST Microelectronics)
® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 1.

GB10NB60S - low drop IGBT (STMicroelectronics)
STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ .

GB10NC60HD - very fast IGBT (STMicroelectronics)
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES rat.

GB10NC60K - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs t(s)Applications c■ .

GB10NC60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES .

GB10RF120K - IGBT PIM MODULE (International Rectifier)
Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capabi.