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T0900DF65A Datasheet - IXYS

T0900DF65A Insulated Gate Bi-Polar Transistor

Date:- 9 March, 2015 Data Sheet Issue:- P3 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Collector emitter voltage (Tj 25°C) Collector emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr.

T0900DF65A Datasheet (953.05 KB)

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Datasheet Details

Part number:

T0900DF65A

Manufacturer:

IXYS

File Size:

953.05 KB

Description:

Insulated gate bi-polar transistor.

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T0900DF65A Insulated Gate Bi-Polar Transistor IXYS

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