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T0900AF65E Datasheet - IXYS

T0900AF65E Insulated Gate Bi-Polar Transistor

Date:- 9 March, 2015 Data Sheet Issue:- P1 Prospective data Insulated Gate Bi-Polar Transistor Type T0900AF65E Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Collector emitter voltage (Tj 25°C) Collector emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM ICEO PMAX Tj Tstg RATINGS DC collect.

T0900AF65E Datasheet (742.26 KB)

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Datasheet Details

Part number:

T0900AF65E

Manufacturer:

IXYS

File Size:

742.26 KB

Description:

Insulated gate bi-polar transistor.

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T0900AF65E Insulated Gate Bi-Polar Transistor IXYS

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