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T0900EB45A Datasheet - IXYS

T0900EB45A Insulated Gate Bi-Polar Transistor

Date:- 26 Feb, 2018 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Re.

T0900EB45A Datasheet (846.50 KB)

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Datasheet Details

Part number:

T0900EB45A

Manufacturer:

IXYS

File Size:

846.50 KB

Description:

Insulated gate bi-polar transistor.

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T0900EB45A Insulated Gate Bi-Polar Transistor IXYS

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