T2000BB45G Datasheet - IXYS

T2000BB45G Insulated Gate Bi-Polar Transistor

Date:- 20 April, 2020 Data Sheet Issue:- 4 Insulated Gate Bi-Polar Transistor Type T2000BB45G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repe.

T2000BB45G Datasheet (926.38 KB)