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SSM9960M, SSM9960GM Dual N-Channel Enhancement Mode Power MOSFET

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Description

www.DataSheet4U.com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characterist.
D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on.

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This datasheet PDF includes multiple part numbers: SSM9960M, SSM9960GM. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SSM9960M, SSM9960GM
Manufacturer
Silicon Standard
File Size
274.67 KB
Datasheet
SSM9960GM_SiliconStandard.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: SSM9960M, SSM9960GM.
Please refer to the document for exact specifications by model.

Applications

* and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Vo

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