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SSM9962M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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Description

www.DataSheet.co.kr SSM9962M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characterist.
D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on.

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Datasheet Specifications

Part number
SSM9962M
Manufacturer
Silicon Standard
File Size
285.63 KB
Datasheet
SSM9962M_SiliconStandard.pdf
Description
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Applications

* and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9962GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Vo

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