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SSM9973GM Dual N-channel Enhancement-mode Power MOSFET

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Description

SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compl.
BVD2 D2 D1 D1 I SO-8 R G2 S2 G1 S1 BVDSS R DS(ON) ID Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination o.

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Datasheet Specifications

Part number
SSM9973GM
Manufacturer
Silicon Standard
File Size
268.20 KB
Datasheet
SSM9973GM-SiliconStandard.pdf
Description
Dual N-channel Enhancement-mode Power MOSFET

Applications

* This device is suitable for low voltage applications such as DC/DC converters. S1 60V 80mΩ 3.9A D2 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current

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