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SSM9980GM, SSM9980M Dual N-channel Enhancement-mode Power MOSFET

SSM9980GM Description

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics .
D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedi.

SSM9980GM Applications

* and is well suited for low voltage applications such as DC/DC converters. This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SSM9980GM, SSM9980M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SSM9980GM, SSM9980M
Manufacturer
Silicon Standard
File Size
218.36 KB
Datasheet
SSM9980M-SiliconStandard.pdf
Description
Dual N-channel Enhancement-mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: SSM9980GM, SSM9980M.
Please refer to the document for exact specifications by model.

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📌 All Tags

Dual N-channel Enhancement-mode Power MOSFET Silicon Standard
Silicon Standard SSM9980GM-like datasheet