SST34HF1601B Datasheet (Silicon Storage Technology) - 16M-bit Concurrent SuperFlash Memory

SST34HF1601B, 16M-bit Concurrent SuperFlash Memory

The SST34HF1601B consists of two memory banks, Bank1 is 256K x16 or 512K x8 and Bank2 is 768K x16 or 1536K x8 which are CMOS concurrent Read/Write flash memories manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling inj

SST34HF1601B Features

* Organized as 1M x16 or 2M x8

* Dual Bank Architecture for Concurrent Read/Write Operation

* Bank1: 12 Mbit (768K x16/1536K x8) Flash

* Bank2: 4 Mbit (256K x16/512K x8) Flash

* Single 2.7-3.3V for Read and Write Operations

* Superior Reliability